VARIABLE RESISTANCE NONVOLATILE STORAGE DEVICE

摘要

A variable resistance nonvolatile storage device (100) according to the present invention includes a plurality of memory cells (10) located at the intersections between a plurality of first signal lines and a plurality of second signal lines, each of the plurality of memory cells (10) including a variable resistance element (1) and a current control element (2) connected to the variable resistance element (1) in series. The variable resistance nonvolatile storage device (100) is provided with a write circuit (105), a row selection circuit (103) and a column selection circuit (104), and the write circuit (105) sequentially selects a block (120) in order from the block (120) located in a more distant position from one circuit among the row selection circuit (103) and the column selection circuit (104) to the block (120) located in a nearer position to said one circuit, and applies an initial break to the plurality of memory cells (10) included in the selected block (120).