发明名称 |
Pattern forming method, use of a resist composition for multiple development, use of a developer for negative development, and use of a rinsing solution for negative development in the pattern forming method. |
摘要 |
A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method. |
申请公布号 |
EP1939691(B1) |
申请公布日期 |
2012.12.05 |
申请号 |
EP20070025004 |
申请日期 |
2007.12.21 |
申请人 |
FUJIFILM CORPORATION |
发明人 |
TSUBAKI, HIDEAKI;KANNA, SHINICHI |
分类号 |
G03F7/20;G03F7/32 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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