METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE CONSISTING OF SEMICONDUCTOR MATERIAL HAVING A REDUCED MEAN FREE PATH LENGTH AND SEMICONDUCTOR DEVICE FABRICATED THEREBY

摘要

A method for producing a body (1) consisting of doped semiconductor material having a defined mean free path length (lambda n) for free charge carriers (CP), and a mean free path length (lambda r) for the free charge carriers (CP) which is smaller than the defined mean free path length (lambda n) is disclosed. An epitactic crystal layer (20) consisting of doped semiconductor material is produced on a substrate crystal (10) consisting of semiconductor material having the defined mean free path length (lambda n), said crystal layer having, at least locally, a mean free path length (lambda r) for the free charge carriers (CP) which is smaller than the defined mean free path length (lambda n). The body (1) can also be produced by joining two crystal bodies (10', 10'') consisting of doped semiconductor material.