发明名称 ION IMPLANTATION APPARATUS
摘要 <p>PURPOSE: An ion implantation apparatus is provided to reduce electric power consumption by leaning the progress direction of ion beam to longitudinal direction of ion beam. CONSTITUTION: An ion source(2) generates a ribbon-shaped ion beam. A mass separation magnet(3) is arranged in downstream of the ion source. The mass separation magnet leans the progress direction of ion beam toward longitudinal direction of ion beam. An analysis slit(4) passes through an ion beam which includes the desired ion species. The direction of magnetic field diagonally crosses the main surface of ion beam which passes through the inside of a mass separation magnet.</p>
申请公布号 KR20120132318(A) 申请公布日期 2012.12.05
申请号 KR20120031665 申请日期 2012.03.28
申请人 发明人
分类号 H01J37/317 主分类号 H01J37/317
代理机构 代理人
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