发明名称 |
Method of producing a semiconductor device with an aluminum or aluminum alloy electrode |
摘要 |
A method of producing a semiconductor device that has a silicon substrate including a first major surface and a second major surface thereof, a front surface device structure being formed in a region of the first major surface, the method has a step of forming a rear electrode in a region of the second major surface, which includes evaporating or sputtering aluminum-silicon onto the second major surface to form an aluminum silicon film as a first layer of the rear electrode, the aluminum silicon film having a silicon concentration of at least 2 percent by weight when the thickness thereof is less than 0.3 μm. |
申请公布号 |
US8324044(B2) |
申请公布日期 |
2012.12.04 |
申请号 |
US20100971173 |
申请日期 |
2010.12.17 |
申请人 |
KAZAMA KENICHI;NAKAJIMA TSUNEHIRO;SASAKI KOJI;SHIMIZU AKIO;HAYASHI TAKASHI;WAKIMOTO HIROKI;FUJI ELECTRIC CO., LTD. |
发明人 |
KAZAMA KENICHI;NAKAJIMA TSUNEHIRO;SASAKI KOJI;SHIMIZU AKIO;HAYASHI TAKASHI;WAKIMOTO HIROKI |
分类号 |
H01L21/8249 |
主分类号 |
H01L21/8249 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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