发明名称 Substrate structure and method for manufacturing the same
摘要 A method for manufacturing a substrate structure is provided. The method includes the following steps. A substrate is provided. The substrate has a patterned first metal layer, a pattern second metal layer and a through hole. After that, a first dielectric layer and a second dielectric layer are formed at a first surface and a second surface of the substrate, respectively. The second surface is opposite to the first surface. Then, the first dielectric layer and the second dielectric layer are patterned. After that, a first trace layer is formed at a surface of the patterned first dielectric layer. The first trace layer is embedded into the patterned first dielectric layer and is coplanar with the first dielectric layer. Then, a second trace layer is formed on a surface of the second dielectric layer.
申请公布号 US8322032(B2) 申请公布日期 2012.12.04
申请号 US20100720238 申请日期 2010.03.09
申请人 LEE CHIH-CHENG;ADVANCED SEMICONDUCTOR ENGINEERING, INC. 发明人 LEE CHIH-CHENG
分类号 H05K3/46;H05K3/02;H05K3/42 主分类号 H05K3/46
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