| 发明名称 |
DOUBLE WORK FUNCTION METAL GATE STRUCTURE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an improved method and a semiconductor element for adjusting a work function of a metal film in a structure including a double metal gate. <P>SOLUTION: A semiconductor element comprises a metal gate electrode 108', 109' having a double work function formed by selectively doping a single metal film with fluorine in an NMOS and with carbon in a PMOS. <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2012235143(A) |
申请公布日期 |
2012.11.29 |
| 申请号 |
JP20120151231 |
申请日期 |
2012.07.05 |
| 申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
KIM MIN-JOO;YI JONG-HO;HAN SUNGKEE;JEONG HYONG-SEOK |
| 分类号 |
H01L21/8238;H01L21/28;H01L21/336;H01L27/092;H01L29/423;H01L29/49;H01L29/78;H01L29/786 |
主分类号 |
H01L21/8238 |
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