| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-receiving device capable of accurately measuring a dark current of a light-receiving element, and a manufacturing method thereof. <P>SOLUTION: A manufacturing method of a light-receiving device comprises: a step of preparing a light-receiving device including a semiconductor substrate 10, a first light-receiving element 20a which is provided on the semiconductor substrate and includes a p-side electrode 23 and an n-side electrode 24, a second light-receiving element 20b which is provided on the semiconductor substrate and includes the p-side electrode and the n-side electrode, an electrode connection part provided on the semiconductor substrate, a first electrode which is provided on the electrode connection part and electrically connected to the p-side electrode of the first light-receiving element, and a second electrode which is provided on the electrode connection part, electrically separated from the first electrode, and electrically connected to the n-side electrode of the second light-receiving element; a first test step of testing characteristics between the first electrode and the n-side electrode of the first light-receiving element; a second test step of testing characteristics between the second electrode and the p-side electrode of the second light-receiving element; and a step of mounting the light-receiving elements on a carrier having a pattern which electrically connects the first electrode and the second electrode. <P>COPYRIGHT: (C)2013,JPO&INPIT |
