| 摘要 |
This semiconductor storage device is provided with: a block array having m memory blocks in the row direction and n memory blocks in the column direction; a page selection circuit for selecting a row of the block array as a page to be selected; and a page buffer for storing data to be written to the selected page or data to be read from said page. Each memory block has: a memory cell array comprising multiple memory cells that enable nonvolatile, nondestructive readout; a row selection circuit for selecting a row of the memory cell array; and a column selection circuit for selecting a column of the memory cell array. When a read command or a write command in a page unit, and a corresponding page address are given, the page selection circuit simultaneously selects multiple memory cells that are separated from each other in the page indicated by the given page address, among the group of memory cells selected according to a row-specifying command, row address, column-specifying command and column address that were given immediately before. |
