发明名称 |
LASER ANNEAL FOR IMAGE SENSORS |
摘要 |
A technique for fabricating an image sensor including a pixel circuitry region and a peripheral circuitry region includes fabricating front side components on a front side of the image sensor. A dopant layer is implanted on a backside of the image sensor. A anti-reflection layer is formed on the backside and covers a first portion of the dopant layer under the pixel circuitry region while exposing a second portion of the dopant layer under the peripheral circuitry region. The first portion of the dopant layer is laser annealed from the backside of the image sensor through the anti-reflection layer. The anti-reflection layer increases a temperature of the first portion of the dopant layer during the laser annealing. |
申请公布号 |
US2012302000(A1) |
申请公布日期 |
2012.11.29 |
申请号 |
US201213566638 |
申请日期 |
2012.08.03 |
申请人 |
MAO DULI;TAI HSIN-CHIH;VENEZIA VINCENT;QIAN YIN;RHODES HOWARD E.;OMNIVISION TECHNOLOGIES, INC. |
发明人 |
MAO DULI;TAI HSIN-CHIH;VENEZIA VINCENT;QIAN YIN;RHODES HOWARD E. |
分类号 |
H01L31/0232 |
主分类号 |
H01L31/0232 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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