发明名称 METHOD FOR COATING QUARTZ CRUCIBLE FOR GROWING SILICON CRYSTAL, AND QUARTZ CRUCIBLE FOR GROWING SILICON CRYSTAL
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for coating a quartz crucible for growing a silicon crystal, whereby the diameter of pinholes formed in a devitrified coating can be kept small. <P>SOLUTION: In this coating method, a bubble-free quartz layer having a thickness of 80 &mu;m to 4 mm is formed on an inner surface of a quartz crucible for growing a silicon crystal, then the surface of the bubble-free quartz layer is covered with an alkaline earth hydroxide, and thereafter, heating is performed to at least a temperature at which the devitrification occurs in the surface. The surface may be covered by immersing the inner surface into a solution of the alkaline earth hydroxide. Further, the heating may be performed before the crucible for growing the silicon crystal is filled with a solid raw material to be melted. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012232857(A) 申请公布日期 2012.11.29
申请号 JP20110100295 申请日期 2011.04.28
申请人 FTB RESEARCH INSTITUTE CO LTD 发明人 HORIOKA YUKICHI;SAKURAGI SHIRO
分类号 C30B29/06;C03B20/00;C30B15/10 主分类号 C30B29/06
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