| 摘要 |
<P>PROBLEM TO BE SOLVED: To materialize an Al<SB POS="POST">x</SB>Ga<SB POS="POST">y</SB>In<SB POS="POST">z</SB>N semiconductor wafer having excellent surface quality on the Ga side, and a manufacturing method of such a wafer. <P>SOLUTION: A high quality wafer includes Al<SB POS="POST">x</SB>Ga<SB POS="POST">y</SB>In<SB POS="POST">z</SB>N (in the formula, 0<y≤1 and x+y+z=1) characterized by the root square average surface roughness of less than 1 nm in an area of 10×10 μm<SP POS="POST">2</SP>on the Ga side of the wafer. Such a wafer is subjected to CMP (chemical mechanical polishing) on the Ga side, by using CMP slurry which contains polishing particles, e.g. silica or alumina, and an acid or a base. The manufacturing method of such a high quality wafer Al<SB POS="POST">x</SB>Ga<SB POS="POST">y</SB>In<SB POS="POST">z</SB>N may include a wrapping step, a mechanical polishing step, and a step for lowering the internal stress of a wafer by thermal annealing or chemical etching for enhancing the surface quality furthermore. This CMP method is applied usefully in order to emphasize the crystal defect on the Ga side of the Al<SB POS="POST">x</SB>Ga<SB POS="POST">y</SB>In<SB POS="POST">z</SB>N wafer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
