| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an ion implantation system. <P>SOLUTION: An ion implantation system includes an ion beam generator, a mass separation device, a holder device, and a first detector. The ion beam generator generates first ion beam. The mass separation device separates second ion beam containing required ions from the first ion beam. The holder device fixes at least one substrate. The holder device and the first detector relatively moves forward and backward in a first direction opposite to the second ion beam, so as to make the substrate and the first detector pass through a projection region of the second ion beam. The first detector acquires a related parameter of the second ion beam. The system acquires the related parameter of the ion beam during implantation of the ions. The system immediately adjusts manufacturing parameters, to achieve a preferable ion implantation effect. <P>COPYRIGHT: (C)2013,JPO&INPIT |
