| 摘要 |
A select transistor for use in a memory device including a plurality of memory transistors connected in series includes a tunnel insulating layer formed on a semiconductor substrate, a charge storage layer formed on the tunnel insulating layer, a blocking insulating layer formed on the charge storage layer and configured to be irradiated with a gas cluster ion beam containing argon as source gas, a gate electrode formed on the blocking insulating layer, and a source/drain region formed within the semiconductor substrate at both sides of the gate electrode. |
