发明名称 |
GROUP-III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR DEVICE |
摘要 |
A III-nitride semiconductor device has a support base comprised of a III-nitride semiconductor and having a primary surface extending along a first reference plane perpendicular to a reference axis inclined at a predetermined angle with respect to a c-axis of the III-nitride semiconductor, and an epitaxial semiconductor region provided on the primary surface of the support base. The epitaxial semiconductor region includes GaN-based semiconductor layers. The reference axis is inclined at a first angle from the c-axis of the III-nitride semiconductor toward a first crystal axis, either the m-axis or a-axis. The reference axis is inclined at a second angle from the c-axis of the III-nitride semiconductor toward a second crystal axis, the other of the m-axis and a-axis. Morphology of an outermost surface of the epitaxial semiconductor region includes a plurality of pits. A pit density of the pits is not more than 5×104 cm−2. |
申请公布号 |
US2012299010(A1) |
申请公布日期 |
2012.11.29 |
申请号 |
US201213484776 |
申请日期 |
2012.05.31 |
申请人 |
ENYA YOHEI;YOSHIZUMI YUSUKE;KYONO TAKASHI;SUMITOMO TAKAMICHI;AKITA KATSUSHI;UENO MASAKI;NAKAMURA TAKAO;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
ENYA YOHEI;YOSHIZUMI YUSUKE;KYONO TAKASHI;SUMITOMO TAKAMICHI;AKITA KATSUSHI;UENO MASAKI;NAKAMURA TAKAO |
分类号 |
H01L33/32 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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地址 |
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