| 摘要 |
<P>PROBLEM TO BE SOLVED: To develop a novel chemical mechanical polishing (CMP) composition capable of removing a phase change material selectively at high removal rate, while reducing total defects and Te residuum defects. <P>SOLUTION: In the chemical mechanical polishing method of a substrate containing, as the initial components, water, abrasive grains, at least one kind of phthalic acid, an anhydride phthalate, a phthalate compound and a phthalic acis derivative, a chelator, poli(acrylic acid-co-maleic acid), and a germanium-antimony-tellurium chalcogenide phase change alloy (GST) using a chemical mechanical polishing composition containing an oxidizer, the chemical mechanical polishing composition facilitates low defect and high GST removal rate. <P>COPYRIGHT: (C)2013,JPO&INPIT |
