| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor device. <P>SOLUTION: A metal silicide layer 13a of a (Ni<SB POS="POST">1-y</SB>Pt<SB POS="POST">y</SB>)<SB POS="POST">2</SB>Si phase is formed by forming gate electrodes GE1 and GE2, and a n<SP POS="POST">+</SP>-type semiconductor region SD1 and a p<SP POS="POST">+</SP>-type semiconductor region SD2 for source and drain, then forming a Ni-Pt alloy film on a semiconductor substrate 1, and applying a first heat treatment to cause a reaction of the alloy film with the gate electrodes GE1 and GE2, the n<SP POS="POST">+</SP>-type semiconductor region SD1, and the p<SP POS="POST">+</SP>-type semiconductor region SD2. The first heat treatment is performed at a temperature where the diffusion coefficient of Pt is larger than the diffusion coefficient of Ni while preserving a portion of the alloy film unchanged on the metal silicide layer 13a. Then a metal silicide layer 13b of a Ni<SB POS="POST">1-y</SB>Pt<SB POS="POST">y</SB>Si phase is formed by removing the unchanged portion of the alloy film, and then applying a second heat treatment to cause a further reaction of the metal silicide layer 13a. The second heat treatment is performed at a temperature of equal to or higher than 580°C and equal to or lower than 800°C. <P>COPYRIGHT: (C)2013,JPO&INPIT |
