| 摘要 |
<p>The present invention provides an organic thin-film transistor insulating layer material that can be used to manufacture organic thin-film transistors in which the absolute value of the threshold voltage and hysterisis are small. The present invention is an organic thin-film transistor insulating material containing: (A) a low polymer compound containing a vinyloxy group in a molecule and/or a high polymer compound containing a first functional group, which is capable of generating a second functional group, which is capable of reacting with active hydrogen and a vinyloxy group in a molecule, through the effects of heat or electromagnetic wave irradiation, and (B) a low polymer compound containing an N-maleoyl amino group in a molecule and/or a high polymer compound containing a first functional group, which is capable of generating a second functional group, which is capable of reacting with active hydrogen and an N-maleoyl amino group in a molecule, through the effects of heat or electromagnetic wave irradiation; and containing at least one of the two types of polymers.</p> |
