发明名称 YTTRIUM OXIDE-CONTAINING MATERIAL, MEMBER OF SEMICONDUCTOR MANUFACTURING EQUIPMENT, AND METHOD OF PRODUCING YTTRIUM OXIDE-CONTAINING MATERIAL
摘要 <P>PROBLEM TO BE SOLVED: To provide an yttrium oxide-containing material with excellent mechanical characteristics. <P>SOLUTION: The yttrium oxide-containing material becomes strong by adding silicon carbide (SiC) and yttrium fluoride (YF<SB POS="POST">3</SB>) to yttrium oxide (Y<SB POS="POST">2</SB>O<SB POS="POST">3</SB>), and yield, handling and reliabililty can be improved accordingly when this strengthened yttrium oxide-containing material is applied to a member of semiconductor manufacturing equipment. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012232897(A) 申请公布日期 2012.11.29
申请号 JP20120176270 申请日期 2012.08.08
申请人 NGK INSULATORS LTD;NAGAOKA UNIV OF TECHNOLOGY 发明人 KOBAYASHI YOSHIMASA;KATSUTA YUJI;SAKAI HIROAKI;NIIHARA KOICHI;NAKAYAMA TADACHIKA
分类号 C04B35/50;H01L21/3065;H01L21/683 主分类号 C04B35/50
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