SOLID-STATE IMAGE CAPTURE DEVICE

摘要

A unit pixel cell (13) comprises: a photoelectric conversion film (6); a transparent electrode (7); a pixel electrode (5); an amplifier transistor (10); a reset transistor (11); and an element separator STI (27) and a leak suppression region (28) which are formed within a silicon substrate (1) between the amplifier transistor (10) and the reset transistor (11) and which electrically separate the amplifier transistor (10) and the reset transistor (11). The reset transistor (11) is connected to a gate electrode (3A) and the pixel electrode (5), and further comprises a drain region which is formed within the silicon substrate (1) which is between the gate electrode (3A) and the element separator STI (27) and the leak suppression region (28). The width of a depletion layer which is formed with a pn bond between the drain region and the silicon substrate (1) upon the surface of the silicon substrate (1) is narrower than the width of a depletion layer which is formed with a pn bond between the drain region and the silicon substrate (1) within the silicon substrate (1).