| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plating apparatus that can normally grow a film on the peripheral part of a wafer. <P>SOLUTION: The plating apparatus includes: a first electrode 6 mounted in a plating tank 2; an annular first and a second openings 7a, 7b adjacent in the order of small diameter from the plating tank 2 toward the outside via an annular flange 7c on a side wall 5c of the plating tank 2; a seal packing 8 mounted on the flange 7c in the second opening 7b; an annular second electrode 9 mounted on the seal packing 8 away from the inner wall of the second opening 7b; a wafer stage 11 larger than the second opening 7b having a wafer holding area 11x with a peripheral edge in a position facing the second electrode 9; a pressurizing hole 11i formed on a region around the wafer holding area 11x of the wafer stage 11, one end of which is directed to the seal packing 8; and a drive part 13 which moves the wafer stage 11 and abuts it on the side wall 5c of the plating tank 2 for closing the second opening 7b. <P>COPYRIGHT: (C)2013,JPO&INPIT |
