| 摘要 |
PROBLEM TO BE SOLVED: To provide a display device that can avoid the generation of current leakage in a thin-film transistor. SOLUTION: The display device is provided with a gate signal wire, an insulating film, a semiconductor layer, and a conductor layer, which are stacked on a substrate in sequence. The conductor layer constitutes at least the drain electrode of a thin-film transistor, to be connected to a drain signal wire and the source electrode of the thin-film transistor to be connected to a pixel electrode. When viewed in a two-dimensional manner, the semiconductor layer is provided with a sidewall having a pattern that is located, at least inside the sidewall surface of the drain electrode at the end portion of the drain electrode. COPYRIGHT: (C)2008,JPO&INPIT |
