| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
<p>A semiconductor device (130) includes: a bonding substrate (100); a thin film element (80) formed on the bonding substrate (100); and a semiconductor element (90) bonded to the bonding substrate (100), the semiconductor element (90) including semiconductor element main body (50) and a plurality of underlying layers (51-54) stacked on a side of the semiconductor element main body (50) facing the bonding substrate (100), and each of the underlying layers (51-54) including an insulating layer and a circuit pattern on the insulating layer, wherein an end of the semiconductor element (90) facing the thin film element (80) is provided in a stepped form so that the closer to the bonding substrate the underlying layers are, the farther ends of the underlying layers facing the thin film element protrude, the end of the semiconductor element (90) is covered with a resin layer (120), and the thin film element (80) is connected to the semiconductor element main body (50) via a connection line (121a) provided on the resin layer (120).</p> |
| 申请公布号 |
EP2528085(A1) |
申请公布日期 |
2012.11.28 |
| 申请号 |
EP20100843836 |
申请日期 |
2010.12.02 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
TOMIYASU, KAZUHIDE;TAKAFUJI, YUTAKA;FUKUSHIMA, YASUMORI;TADA, KENSHI;MATSUMOTO, SHIN |
| 分类号 |
H01L21/02;H01L21/336;H01L27/00;H01L27/12;H01L29/786 |
主分类号 |
H01L21/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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