| 摘要 |
The invention relates to a method for the ion beam (100) treatment of a metal layer (10) deposited on a substrate (30), comprising a step in which: the metal layer (10) has a thickness, efrag, of between 0.2 nm and 20 nm; the ion acceleration voltage is between 10 kV and 1000 kV; the temperature of the metal layer (10) is less than or equal to Tf/3; and the ion dose per surface unit is selected from a range of between 1012 ions/cm2 and 1018 ions/cm2 so as to fragment the metal layer (10) in order to produce metal deposits (40) in the form of nanoparticles on the surface of the substrate, having a maximum thickness of between 0.2 nm and 20 nm and a maximum width of between 0.2 nm and 100 nm. |
