| 摘要 |
PURPOSE: A method for manufacturing a thin film transistor base biosensor is provided to form a passive layer on a chalcogenide channel layer by an atomic layer deposition method, thereby enhancing the physical chemicals stability of the chalcogenide channel layer. CONSTITUTION: A method for manufacturing a thin film transistor base biosensor comprises next steps. A gate electrode(2) is formed on a substrate. A gate insulating film(3) is formed on the gage electrode. A chalcogenide channel layer(4) is formed on the gate insulating film. A passive layer is formed on the chalcogenide channel layer by using an atomic layer deposition method. A source/drain region is formed by using a photoresist and the chalcogenide channel layer on the source/drain region. A source/drain region electrode is formed. [Reference numerals] (1) Substrate; (2) Gate electrode; (3) Gate insulating film; (4) Chalcogenide chanel; (41) Passivation ALD thin film
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