发明名称 ORGANIC LIGHT-EMITTING FIELD-EFFECT TRANSISTOR
摘要 FIELD: physics.SUBSTANCE: in an organic light-emitting field-effect transistor with an active layer, having two "source"-"drain" electrodes and a dielectric barrier layer between the active layer and the control electrode (gate), the active layer is in form of an organic matrix into which two-component (core-cladding) semiconductor nanoparticles are embedded. The nanoparticles can change the diameter of the semiconductor core in the range of 2.0-6.0 nm and thickness of the semiconductor cladding in the range of 1.0-3.0 nm in order to adjust the emission region in the range of 400-650 nm of the visible spectrum.EFFECT: invention enables to produce stable organic light-emitting field-effect transistors with high quantum output of luminescence and a controlled emission spectrum in the visible range.3 cl, 2 dwg
申请公布号 RU2468476(C1) 申请公布日期 2012.11.27
申请号 RU20110119577 申请日期 2011.05.17
申请人 ROSSIJSKAJA FEDERATSIJA, OT IMENI KOTOROJ VYSTUPAET MINISTERSTVO PROMYSHLENNOSTI I TORGOVLI ROSSIJSKOJ FEDERATSII 发明人 AMBROZEVICH SERGEJ ALEKSANDROVICH;BELIKOVA TAT'JANA PAVLOVNA;VITUKHNOVSKIJ ALEKSEJ GRIGOR'EVICH;OVCHINNIKOV ANATOLIJ VLADIMIROVICH
分类号 H01L51/50;B82B1/00 主分类号 H01L51/50
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