发明名称 |
ORGANIC LIGHT-EMITTING FIELD-EFFECT TRANSISTOR |
摘要 |
FIELD: physics.SUBSTANCE: in an organic light-emitting field-effect transistor with an active layer, having two "source"-"drain" electrodes and a dielectric barrier layer between the active layer and the control electrode (gate), the active layer is in form of an organic matrix into which two-component (core-cladding) semiconductor nanoparticles are embedded. The nanoparticles can change the diameter of the semiconductor core in the range of 2.0-6.0 nm and thickness of the semiconductor cladding in the range of 1.0-3.0 nm in order to adjust the emission region in the range of 400-650 nm of the visible spectrum.EFFECT: invention enables to produce stable organic light-emitting field-effect transistors with high quantum output of luminescence and a controlled emission spectrum in the visible range.3 cl, 2 dwg |
申请公布号 |
RU2468476(C1) |
申请公布日期 |
2012.11.27 |
申请号 |
RU20110119577 |
申请日期 |
2011.05.17 |
申请人 |
ROSSIJSKAJA FEDERATSIJA, OT IMENI KOTOROJ VYSTUPAET MINISTERSTVO PROMYSHLENNOSTI I TORGOVLI ROSSIJSKOJ FEDERATSII |
发明人 |
AMBROZEVICH SERGEJ ALEKSANDROVICH;BELIKOVA TAT'JANA PAVLOVNA;VITUKHNOVSKIJ ALEKSEJ GRIGOR'EVICH;OVCHINNIKOV ANATOLIJ VLADIMIROVICH |
分类号 |
H01L51/50;B82B1/00 |
主分类号 |
H01L51/50 |
代理机构 |
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代理人 |
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地址 |
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