| 摘要 |
A silicon-on-insulator device having multiple crystal orientations is disclosed. In one embodiment, the silicon-on-insulator device includes a substrate layer, an insulating layer disposed on the substrate layer, a first silicon layer, and a strained silicon layer. The first silicon layer has a first crystal orientation and is disposed on a portion of the insulating layer, and the strained silicon layer is disposed on another portion of the insulating layer and has a crystal orientation different from the first crystal orientation. |
