发明名称 |
Barrier film for flexible copper substrate and sputtering target for forming barrier film |
摘要 |
A barrier film for a flexible copper substrate comprising a Co—Cr alloy film containing 5 to 30 wt % of Cr and a balance of unavoidable impurities and Co is provided. The barrier film has a thickness of 3 to 150 nm and a film thickness uniformity of 10% or less at 1&sgr;. A sputtering target for forming a barrier film comprising a Co—Cr alloy containing 5 to 30 wt % of Cr and a balance of unavoidable impurities and Co is also provided. The relative magnetic permeability in the in-plane direction of the sputtered face of the target is 100 or less. The barrier film for a flexible copper substrate and the sputtering target for forming such barrier film have a film thickness that is thin enough to prevent film peeling and inhibiting the diffusion of copper to a resin film such as polyimide, is capable of obtaining a sufficient barrier effect even in a minute wiring pitch and has barrier characteristics that will not change even when the temperature rises due to heat treatment or the like. |
申请公布号 |
US8318314(B2) |
申请公布日期 |
2012.11.27 |
申请号 |
US20090640075 |
申请日期 |
2009.12.17 |
申请人 |
IRUMATA SHUICHI;YAMAKOSHI YASUHIRO;JX NIPPON MINING & METALS CORPORATION |
发明人 |
IRUMATA SHUICHI;YAMAKOSHI YASUHIRO |
分类号 |
B32B15/08;B32B5/10;B32B15/00;B32B15/01;B32B15/20;B32B27/00;B32B27/06 |
主分类号 |
B32B15/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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