Memory cell, a memory array and a method of programming a memory cell

摘要

A method of programming a memory cell (100), the method comprising applying a first electric potential to a first electric terminal (101) of the memory cell (100) to accelerate first charge carriers of a first type of conductivity to thereby generate second charge carriers of a second type of conductivity by impact ionisation of the accelerated first charge carriers, and applying a second electric potential to a second electric terminal (102) of the memory cell (100) to accelerate the second charge carriers to thereby inject the second charge carriers in a charge trapping structure (103) of the memory cell (100).