| 摘要 |
PURPOSE: A nitride semiconductor device, a nitride semiconductor wafer, and a manufacturing method for a nitride semiconductor layer are provided to effectively prevent crack generation by setting the thickness of an underlying layer to be less than that of the semiconductor layer. CONSTITUTION: An Al(aluminium) containing nitride semiconductor layer(50) is formed on a silicon substrate(40). An underlying layer(10i) is formed on the Al containing nitride semiconductor layer. A functional layer(10s) is installed on the underlying layer. The functional layer includes a semiconductor layer(10). The semiconductor layer has higher impurity concentration than that of the underlying layer.
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