| 摘要 |
<p>PURPOSE: A deposition process for a CIGS(copper indium gallium diselenide) solar cell is provided to simplify a deposition process and to enhance production efficiency by successively forming a layer, a cell, and a module of a solar cell in vacuum. CONSTITUTION: A molybdenum layer(3) is formed on a substrate(1). A CIG(copper indium gallium) layer(5) and a buffer layer(7) are successively formed on the top of the molybdenum layer. A zno(zinc oxide) layer(9) is formed on an upper side of the buffer layer. An AZO(aluminum zinc oxide) layer is formed on the top of the zno layer. A process for forming the molybdenum layer and the AZO layer are performed by a processing chamber including a vacuum pump in a vacuum condition. [Reference numerals] (AA) Tertiary; (BB) Secondary; (CC) Primary</p> |
