发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
摘要 |
A method of fabricating a semiconductor device includes following steps. A substrate is provided, wherein a first dielectric layer having a trench therein is formed on the substrate, a source/drain region is formed in the substrate at two sides of the trench, and a second dielectric layer is formed on the substrate in the trench. A first physical vapor deposition process is performed to form a Ti-containing metal layer in the trench. A second physical vapor deposition process is performed to form an Al layer on the Ti-containing metal layer in the trench. A thermal process is performed to anneal the Ti-containing metal layer and the Al layer so as to form a work function metal layer. A metal layer is formed to fill the trench.
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申请公布号 |
US2012292721(A1) |
申请公布日期 |
2012.11.22 |
申请号 |
US201113109599 |
申请日期 |
2011.05.17 |
申请人 |
HUANG HSIN-FU;LIN KUN-HSIEN;HSU CHI-MAO;TSAI MIN-CHUAN;LEE TZUNG-YING;LIN CHIN-FU;UNITED MICROELECTRONICS CORP. |
发明人 |
HUANG HSIN-FU;LIN KUN-HSIEN;HSU CHI-MAO;TSAI MIN-CHUAN;LEE TZUNG-YING;LIN CHIN-FU |
分类号 |
H01L29/78;H01L21/285 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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