发明名称 |
LIGHTLY-DOPED DRAINS (LDD) OF IMAGE SENSOR TRANSISTORS USING SELECTIVE EPITAXY |
摘要 |
Embodiments of the present invention are directed to an image sensor having pixel transistors and peripheral transistors disposed in a silicon substrate. For some embodiments, a protective coating is disposed on the peripheral transistors and doped silicon is epitaxially grown on the substrate to form lightly-doped drain (LDD) areas for the pixel transistors. The protective oxide may be used to prevent epitaxial growth of silicon on the peripheral transistors during formation of the LDD areas of the pixel transistors. |
申请公布号 |
US2012295385(A1) |
申请公布日期 |
2012.11.22 |
申请号 |
US201213559467 |
申请日期 |
2012.07.26 |
申请人 |
MAO DULI;TAI HSIN-CHIH;RHODES HOWARD E.;VENEZIA VINCENT;QIAN YIN;OMNIVISION TECHNOLOGIES, INC. |
发明人 |
MAO DULI;TAI HSIN-CHIH;RHODES HOWARD E.;VENEZIA VINCENT;QIAN YIN |
分类号 |
H01L31/0248 |
主分类号 |
H01L31/0248 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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