发明名称 |
IMPROVED MICROWAVE PLASMA REACTORS |
摘要 |
<p>Microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed reactors operate at high pressures (>180-320 Torr) and high power densities (> 150W/cm3), and thereby enable high deposition rate CVD processes that rapidly deposit materials. In particular, reactor design examples are described that, when operating in the 180-320 Torr pressure regime, rapidly CVD synthesize high quality polycrystalline (PCD) and single crystal diamond (SCD). The improved reactors include a radial contraction in the vicinity of the plasma chamber (and optionally a combined expansion in the vicinity of the electromagnetic wave source, followed by the contraction) in the main microwave chamber as electromagnetic energy propagates from an electromagnetic wave source to a plasma/deposition chamber.</p> |
申请公布号 |
WO2012158532(A1) |
申请公布日期 |
2012.11.22 |
申请号 |
WO2012US37555 |
申请日期 |
2012.05.11 |
申请人 |
BOARD OF TRUSTEES MICHIGAN STATE UNIVERSITY;ASMUSSEN, JES;GU, YAJUN;GROTJOHN, TIMOTHY, A. |
发明人 |
ASMUSSEN, JES;GU, YAJUN;GROTJOHN, TIMOTHY, A. |
分类号 |
C23C16/511 |
主分类号 |
C23C16/511 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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