| 发明名称 |
METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, AND GROUP III NITRIDE CRYSTAL |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-quality group III nitride crystal which is excellent in processability. <P>SOLUTION: A group III nitride single crystal is heat-treated at 1000°C or higher to form a film made of a compound containing a group III element, and the film is removed, thereby producing the group III nitride crystal. <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2012231103(A) |
申请公布日期 |
2012.11.22 |
| 申请号 |
JP20110151709 |
申请日期 |
2011.07.08 |
| 申请人 |
MITSUBISHI CHEMICALS CORP |
发明人 |
MATSUMOTO SO;SUZAKI KUNITADA;FUJITO TAKESHI |
| 分类号 |
H01L21/205;C30B29/38;C30B33/02;H01L21/20 |
主分类号 |
H01L21/205 |
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