发明名称 PROCESSING METHOD OF THIN FILM, FREQUENCY ADJUSTING METHOD OF PIEZOELECTRIC RESONATOR, AND ELECTRONIC DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a processing method of a thin film with high productivity with which a thin film of a low processing threshold value for laser can be formed efficiently on a package inner surface, a frequency adjusting method of a piezoelectric resonator, and an electronic device. <P>SOLUTION: While a frequency of a piezoelectric resonator 3 is preset to a lower frequency side than a target value, a thin film 11 for frequency adjustment on a surface of the piezoelectric resonator 3 is irradiated with a laser 5 from an outer surface side of a cover member 2 to be scattered, and a mass of the piezoelectric resonator 3 is decreased, so that the frequency is changed to a higher frequency side. At such a time, scattered particles 11a of the thin film 11 are deposited on a surface of the cover member 12, thereby newly forming a thin film 12. If the frequency exceeded a target value by the aforementioned frequency adjustment, the thin film 12 formed on the surface of the cover member 2 is irradiated with the laser 5 from the outer surface side of the cover member 2 to be scattered, and scattered particles 12a are deposited again on the surface of the piezoelectric resonator 3 to increase the mass of the piezoelectric resonator 3, so that the frequency is changed to the lower frequency side. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012231233(A) 申请公布日期 2012.11.22
申请号 JP20110097168 申请日期 2011.04.25
申请人 CITIZEN FINETECH MIYOTA CO LTD;NAGAOKA UNIV OF TECHNOLOGY 发明人 TADA KOZO;SAKURAI HIDEMASA;ITO YOSHIRO;TANABE RIE
分类号 H03H3/04;H01L41/09;H01L41/22;H03H9/02;H03H9/17 主分类号 H03H3/04
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