发明名称 FORMATION OF A ZINC PASSIVATION LAYER ON TITANIUM OR TITANIUM ALLOYS USED IN SEMICONDUCTOR PROCESSING
摘要 Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.
申请公布号 US2012295436(A1) 申请公布日期 2012.11.22
申请号 US201213547856 申请日期 2012.07.12
申请人 KONG BOB;SUN ZHI-WEN;LANG CHI-I;TONG JINHONG;CHIANG TONY;INTERMOLECULAR, INC. 发明人 KONG BOB;SUN ZHI-WEN;LANG CHI-I;TONG JINHONG;CHIANG TONY
分类号 H01L21/768 主分类号 H01L21/768
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