发明名称 |
LOW TEMPERATURE SELECTIVE EPITAXY OF SILICON GERMANIUM ALLOYS EMPLOYING CYCLIC DEPOSIT AND ETCH |
摘要 |
Cyclic deposit and etch (CDE) selective epitaxial growth employs an etch chemistry employing a combination of hydrogen chloride and a germanium-containing gas to provide selective deposition of a silicon germanium alloy at temperatures lower than 625° C. High strain epitaxial silicon germanium alloys having a germanium concentration greater than 35 atomic percent in a temperature range between 400° C. and 550° C. A high order silane having a formula of SinH2n+2, in which n is an integer greater than 3, in combination with a germanium-containing precursor gas is employed to deposit the silicon germanium alloy with thickness uniformity and at a high deposition rate during each deposition step in this temperature range. Presence of the germanium-containing gas in the etch chemistry enhances the etch rate of the deposited silicon germanium alloy material during the etch step.
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申请公布号 |
US2012295421(A1) |
申请公布日期 |
2012.11.22 |
申请号 |
US201213475503 |
申请日期 |
2012.05.18 |
申请人 |
BRABANT PAUL D.;CHUNG KEITH;HE HONG;SADANA DEVENDRA K.;SHINRIKI MANABU;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BRABANT PAUL D.;CHUNG KEITH;HE HONG;SADANA DEVENDRA K.;SHINRIKI MANABU |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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