发明名称 RESIST COMPOSITION AND PATTERNING PROCESS
摘要 <p>PURPOSE: A resist composition and a pattern forming method are provided to form fine hole patterns of high sensitivity by reducing nanoedge roughness and dissolution of exposed parts. CONSTITUTION: A resist composition includes a polymeric compound and one or more onium salt type photoacid generators. The polymeric compound includes a repeating unit with a hydroxyl group substituted with an acid-labile group represented by chemical formula 1. The onium salt type photoacid generators are selected from an onium salt type photoacid generator generating sulfonic acid represented by chemical formula 2, an onium salt type photo acid generator generating imide acid represented by chemical formula 3, an onium salt type photoacid generator generating methide acid represented by chemical formula 4, and an onium salt type photoacid generator generating carboxylic acid represented by chemical formula 5. Cations of the onium salt are sulfonium cations or iodium cations.</p>
申请公布号 KR20120127292(A) 申请公布日期 2012.11.21
申请号 KR20120050113 申请日期 2012.05.11
申请人 发明人
分类号 G03F7/004;G03F1/32;G03F7/00;G03F7/30 主分类号 G03F7/004
代理机构 代理人
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