发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE: A semiconductor device is provided to prevent the malfunction of a circuit by decreasing a drain current when a transistor is off. CONSTITUTION: A first transistor(111) supplies a first potential to a first wiring. A second transistor(112) supplies a second potential to the first wiring. A third transistor(113) supplies a third potential to the gate of the first transistor. A fourth transistor(114) supplies the second potential to the gate of the first transistor. A semiconductor device includes an offset voltage maintaining circuit.</p>
申请公布号 KR20120127268(A) 申请公布日期 2012.11.21
申请号 KR20120049579 申请日期 2012.05.10
申请人 发明人
分类号 G09G3/36;G09G3/20;H01L29/786;H03K17/06 主分类号 G09G3/36
代理机构 代理人
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