发明名称 |
Memory system that detects bit errors due to read disturbance and methods thereof |
摘要 |
Methods and memory systems are provided that detect bit errors due to read disturbances. A main page of a flash memory in a memory system is read. A bit error in data that is read from the main page is detected and corrected. In parallel with reading the main page, a bit error is detected in data that is read from a dummy page of the flash memory. |
申请公布号 |
US8316278(B2) |
申请公布日期 |
2012.11.20 |
申请号 |
US20080141611 |
申请日期 |
2008.06.18 |
申请人 |
AHN SE-JIN;KIM YONG-HYEON;CHOI SUNG-UP;KIM YONG-KYEONG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
AHN SE-JIN;KIM YONG-HYEON;CHOI SUNG-UP;KIM YONG-KYEONG |
分类号 |
G11C21/00 |
主分类号 |
G11C21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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