发明名称 Memory system that detects bit errors due to read disturbance and methods thereof
摘要 Methods and memory systems are provided that detect bit errors due to read disturbances. A main page of a flash memory in a memory system is read. A bit error in data that is read from the main page is detected and corrected. In parallel with reading the main page, a bit error is detected in data that is read from a dummy page of the flash memory.
申请公布号 US8316278(B2) 申请公布日期 2012.11.20
申请号 US20080141611 申请日期 2008.06.18
申请人 AHN SE-JIN;KIM YONG-HYEON;CHOI SUNG-UP;KIM YONG-KYEONG;SAMSUNG ELECTRONICS CO., LTD. 发明人 AHN SE-JIN;KIM YONG-HYEON;CHOI SUNG-UP;KIM YONG-KYEONG
分类号 G11C21/00 主分类号 G11C21/00
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