发明名称 Method of forming semiconductor device having contact plug
摘要 A method of forming a semiconductor device includes forming a lower conductive pattern on a substrate, forming an insulating layer over the lower conductive pattern, forming a contact hole through the insulating layer to expose the lower conductive pattern, forming a first spacer along sides of the contact hole, and then forming a contact plug in the contact hole. The contact plug is formed so as to contact the lower conductive pattern.
申请公布号 US8314025(B2) 申请公布日期 2012.11.20
申请号 US20100793843 申请日期 2010.06.04
申请人 CHO SUNG-IL;KIM NAM-GUN;LEE JONG-CHEOL;SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO SUNG-IL;KIM NAM-GUN;LEE JONG-CHEOL
分类号 H01L21/00 主分类号 H01L21/00
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