发明名称 |
Method for fabricating semiconductor device |
摘要 |
A method for fabricating a semiconductor device through a chemical mechanical polishing (CMP) process is provided. The CMP process is performed by using a slurry. The semiconductor device fabrication method can ensure the reliability and economical efficiency of the device by performing a CMP process using a CMP slurry having a high polishing selectivity with respect to a target surface, an anti-scratch characteristic, and a high global planarization characteristic. |
申请公布号 |
US8314030(B2) |
申请公布日期 |
2012.11.20 |
申请号 |
US20090489747 |
申请日期 |
2009.06.23 |
申请人 |
PARK JUM-YONG;KWAK NOH-JUNG;CHOI YONG-SOO;RYU CHEOL-HWI;HYNIX SEMICONDUCTOR, INC. |
发明人 |
PARK JUM-YONG;KWAK NOH-JUNG;CHOI YONG-SOO;RYU CHEOL-HWI |
分类号 |
H01L21/302;B44C1/22 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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