发明名称 Method for fabricating semiconductor device
摘要 A method for fabricating a semiconductor device through a chemical mechanical polishing (CMP) process is provided. The CMP process is performed by using a slurry. The semiconductor device fabrication method can ensure the reliability and economical efficiency of the device by performing a CMP process using a CMP slurry having a high polishing selectivity with respect to a target surface, an anti-scratch characteristic, and a high global planarization characteristic.
申请公布号 US8314030(B2) 申请公布日期 2012.11.20
申请号 US20090489747 申请日期 2009.06.23
申请人 PARK JUM-YONG;KWAK NOH-JUNG;CHOI YONG-SOO;RYU CHEOL-HWI;HYNIX SEMICONDUCTOR, INC. 发明人 PARK JUM-YONG;KWAK NOH-JUNG;CHOI YONG-SOO;RYU CHEOL-HWI
分类号 H01L21/302;B44C1/22 主分类号 H01L21/302
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