发明名称 |
Nonvolatile memory devices that use resistance materials and internal electrodes, and related methods and processing systems |
摘要 |
A nonvolatile memory device, a method of fabricating the nonvolatile memory device and a processing system including the nonvolatile memory device. The nonvolatile memory device may include a plurality of internal electrodes that extend in a direction substantially perpendicular to a face of a substrate, a plurality of first external electrodes that extend substantially in parallel with the face of the substrate, and a plurality of second external electrodes that also extend substantially in parallel with the face of the substrate. Each first external electrode is on a first side of a respective one of the internal electrodes, and each second external electrode is on a second side of a respective one of the internal electrodes. These devices also include a plurality of variable resistors that contact the internal electrodes, the first external electrodes and the second external electrodes.
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申请公布号 |
US8314003(B2) |
申请公布日期 |
2012.11.20 |
申请号 |
US201113101263 |
申请日期 |
2011.05.05 |
申请人 |
BAEK IN-GYU;SIM HYUN-JUN;ZHAO JIN-SHI;YIM EUN-KYUNG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BAEK IN-GYU;SIM HYUN-JUN;ZHAO JIN-SHI;YIM EUN-KYUNG |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
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地址 |
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