发明名称 |
Semicoductor device having a lateral double diffused MOSFET transistor with a lightly doped source and a CMOS transistor |
摘要 |
Methods and systems for monolithically fabricating a lateral double-diffused MOSFET (LDMOS) transistor having a source, drain, and a gate on a substrate, with a process flow that is compatible with a CMOS process flow are described. |
申请公布号 |
US8314461(B2) |
申请公布日期 |
2012.11.20 |
申请号 |
US201113311400 |
申请日期 |
2011.12.05 |
申请人 |
YU BUDONG;ZUNIGA MARCO A.;VOLTERRA SEMICONDUCTOR CORPORATION |
发明人 |
YU BUDONG;ZUNIGA MARCO A. |
分类号 |
H01L0031/000313 |
主分类号 |
H01L0031/000313 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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