THIN FILM SEMICONDUCTOR DEVICE FOR DISPLAYS, AND METHOD FOR PRODUCING THIN FILM SEMICONDUCTOR DEVICE FOR DISPLAYS

摘要

The method includes: a first step in which a glass substrate (1) is prepared; a second step in which an undercoat layer (2) that includes a nitride film is formed over the glass substrate; a third step in which a barrier layer (9) is formed over the undercoat layer; a fourth step in which a molybdenum metal layer (3M) is formed over the barrier layer; a fifth step in which a gate electrode (3) is formed from the molybdenum metal layer; a sixth step in which a gate insulating film (4) is formed over the gate electrode; a seventh step in which an amorphous silicon layer is formed as an amorphous semiconductor layer (5a) over the gate insulating film; an eighth step in which the amorphous silicon layer is crystallized by an annealing process using a continuous wave laser, forming a polycrystalline semiconductor layer (5p) comprising a polycrystalline silicon layer; and a ninth step in which a source electrode (8a) and a drain electrode (8b) are formed above the polycrystalline silicon layer. The annealing process in the eighth step changes a portion of the barrier layer to a layer in which oxygen atoms are the principal component.