| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing pad which solves the problem of scratching caused by the use of conventional hard (dry) polishing pads, achieves an excellent polishing rate and polishing uniformity, and is applicable not only to primary polishing but also to finish polishing, and to provide a manufacturing method for the same. <P>SOLUTION: The polishing pad for polishing semiconductor devices includes a polishing layer having a polyurethane polyurea resin foam containing generally spherical bubbles. In the polishing pad, the Young's modulus E of the polyurethane polyurea resin foam is in the range of 450 to 30,000 kPa, and the density D of the same is in the range of 0.30 to 0.60 g/cm<SP POS="POST">3</SP>. <P>COPYRIGHT: (C)2013,JPO&INPIT |
