| 摘要 |
The present disclosure provides a vertical GaN-based semiconductor diode and a method of manufacturing the same. The GaN-based &pgr;i-V group semiconductor device includes a substrate, a p-type ohmic electrode layer on the substrate, a p-type GaN-based &pgr;i-V group compound semiconductor layer on the p-type ohmic electrode layer, an n-type GaN-based &pgr;i-V group compound semiconductor layer on the p-type GaN-based &pgr;i-V group compound semiconductor layer, and an n-type ohmic electrode layer on the n-type GaN-based IE-V group compound semiconductor layer. The p-type ohmic electrode layer is an Ag-based highly reflective electrode having a high reflectivity of 70% or more, and a surface of the n-type GaN-based E-V group compound semiconductor layer is subjected to at least one of a process of forming photonic crystals and a process of surface roughening. |
