| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress a signal propagation time and a circuit size in a DRAM. <P>SOLUTION: A fuse area 116 in which a fuse element 120 for storing an address of a defective memory cell is arranged is formed in a semiconductor storage device. A guard ring 118 is formed in the surroundings of the fuse area 116, and the guard ring 118 is covered with a passivation film 124. An opening part 126 is provided in the passivation film 124 on the fuse area 116. The guard ring 118 includes a first ring 134 of a first layer 128, a second ring 136 of a second layer 130, a third ring 138 of a third layer 132, a first connection ring 142 connecting the first ring 134 and the second ring 136 with each other, and a second connection ring 144 connecting the second ring 136 and the third ring 138 with each other. The first ring 134 is arranged inside the second ring 136 so that a non-formation area of the first ring 134 is secured under the second ring 136. <P>COPYRIGHT: (C)2013,JPO&INPIT |
