发明名称 |
Methods of Forming Capacitors |
摘要 |
A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield is etched through within the opening. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode
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申请公布号 |
US2012289022(A1) |
申请公布日期 |
2012.11.15 |
申请号 |
US201213555492 |
申请日期 |
2012.07.23 |
申请人 |
KIEHLBAUCH MARK;SHEA KEVIN;MICRON TECHNOLOGY, INC. |
发明人 |
KIEHLBAUCH MARK;SHEA KEVIN |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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